rGO????????In2S3?????????? ??Sb2Se3???????

Antimony selenide (Sb2Se3) is a narrow-band-gap semiconductor that has been increasingly used as an excellent light-harvesting material in photoelectrocatalysis. The unique connections of the one-dimensional (Sb4Se6)n ribbon structural units determine high anisotropy their carrier transport. In this study, reduced graphene oxide (rGO)-modified quasi-one-dimensional Sb2Se3@In2S3 light-trapping heterostructure was successfully constructed by vapor transport deposition followed situ hydrothermal method. results showed thickness grown non-layered In2S3 nanosheets significantly from 30 to 10 nm under space-confinement effect rGO, facilitating construction nanostructures and increasing electrochemically active surface area photoelectrode. Sb2Se3@In2S3-rGO nanorod photoelectrode achieved higher photocurrent density (1.169 mA cm?2), which 2 16 times than pristine Sb2Se3, respectively. ultrathin were co-modified with rGO fabricate brush-like composite exhibited favourable stability average hydrogen production rate 16.59 µmol cm?2 h?1 neutral conditions. experimental theoretical calculations both significant improvement photoelectrochemical performance can be perfectly explained type-II heterojunction mechanism. This study provides new exploration design rGO-modified photoelectrodes for applications.